Structural design and fabrication of 830 nm GaAsP/AlGaAs low polarization superluminescent diode with tensile-strained wells
Liu, Shang-jun, Zhou, Yong, Zhou, Shuai, Mo, Cai-ping, Zhao, Hong, Ding, Shi-hao, Tian, Kun, Tang, Zu-rongLanguage:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-018-9055-7
Date:
April, 2018
File:
PDF, 1.69 MB
english, 2018