Ex-situ n+ doping of GeSn alloys via non-equilibrium...

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Semiconductor Science and Technology 2018 / 04

Ex-situ n+ doping of GeSn alloys via non-equilibrium processing

Prucnal, Slawomir, Berencén, Yonder, Wang, Mao, Rebohle, Lars, Boettger, Roman, Fischer, Inga Anita, Augel, Lion, Oehme, M, Schulze, Joerg, Voelskow, Matthias, Helm, Manfred, Skorupa, Wolfgang, Zhou,
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/aabe05
Date:
April, 2018
File:
PDF, 1018 KB
english, 2018
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