Origin of a continuously enlarge memristor effect in Nb...

Vacuum 2018 / 05 Vol. 151

Origin of a continuously enlarge memristor effect in Nb inserted into MgB 2 multilayer constructed heterojunctions

Zhu, Shouhui, Zhang, Xuejiao, Sun, Bai, Mao, Shuangsuo, Zheng, Pingping, Zhao, Yong, Xia, Yudong
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Volume:
151
Language:
english
Journal:
Vacuum
DOI:
10.1016/j.vacuum.2018.02.038
Date:
May, 2018
File:
PDF, 1.48 MB
english, 2018
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