Effects of Hf buffer layer at the Y-doped HfO 2 /Si interface on ferroelectric characteristics of Y-doped HfO 2 films formed by reactive sputtering
Zhang, Yu, Jun, Xu, Zhou, Da-yu, Wang, Hang-hang, Wen-qi, Lu, Choi, Chi-KyuLanguage:
english
Journal:
Ceramics International
DOI:
10.1016/j.ceramint.2018.04.093
Date:
April, 2018
File:
PDF, 1.00 MB
english, 2018