Physics-based modeling of TID induced global static leakage...

Microelectronics Reliability 2018 / 05 Vol. 84

Physics-based modeling of TID induced global static leakage in different CMOS circuits

Zebrev, Gennady I., Orlov, Vasily V., Gorbunov, Maxim S., Drosdetsky, Maxim G.
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Volume:
84
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2018.03.014
Date:
May, 2018
File:
PDF, 1.90 MB
english, 2018
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