Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)
Lee, C. D., Feenstra, R. M., Shigiltchoff, O., Devaty, R. P., Choyke, W. J.Volume:
7
Year:
2002
Language:
english
Journal:
MRS Internet Journal of Nitride Semiconductor Research
DOI:
10.1557/S1092578300000284
File:
PDF, 408 KB
english, 2002