Curvature evolution of 200 mm diameter GaN-on-insulator...

Japanese Journal of Applied Physics 2018 / 05 Vol. 57; Iss. 5

Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

Zhang, Li, Lee, Kwang Hong, Kadir, Abdul, Wang, Yue, Lee, Kenneth E., Tan, Chuan Seng, Chua, Soo Jin, Fitzgerald, Eugene A.
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.051002
Date:
May, 2018
File:
PDF, 1.29 MB
english, 2018
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