Reverse leakage current characteristics of InGaN/GaN...

Japanese Journal of Applied Physics 2018 / 05 Vol. 57; Iss. 5

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

Zhou, Shengjun, Lv, Jiajiang, Wu, Yini, Zhang, Yuan, Zheng, Chenju, Liu, Sheng
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Volume:
57
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.57.051003
Date:
May, 2018
File:
PDF, 1.70 MB
english, 2018
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