Influence of Ta2O5 Interfacial Oxide Layer Thickness on Electronic Parameters of Al/Ta2O5/p-Si/Al Heterostructure
Reddy, N. Nanda Kumar, Akkera, Harish Sharma, Sekhar, M. Chandra, Uthanna, S.Language:
english
Journal:
Silicon
DOI:
10.1007/s12633-018-9840-1
Date:
April, 2018
File:
PDF, 951 KB
english, 2018