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Ultrathin tellurium dioxide: Emerging direct band gap semiconductor with high-mobility transport anisotropy
Guo, Shiying, Zhu, Zhen, Hu, Xuemin, Zhou, Wenhan, Song, Xiufeng, Zhang, Shengli, Zhang, Kan, Zeng, HaiboYear:
2018
Language:
english
Journal:
Nanoscale
DOI:
10.1039/C8NR01028E
File:
PDF, 1.77 MB
english, 2018