An in-depth description of bipolar resistive switching in...

Journal of Applied Physics 2018 / 04 Vol. 123; Iss. 15

An in-depth description of bipolar resistive switching in Cu/HfO x /Pt devices, a 3D kinetic Monte Carlo simulation approach

Aldana, S., Roldán, J. B., García-Fernández, P., Suñe, J., Romero-Zaliz, R., Jiménez-Molinos, F., Long, S., Gómez-Campos, F., Liu, M.
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Volume:
123
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5020148
Date:
April, 2018
File:
PDF, 5.11 MB
english, 2018
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