A New Velocity Saturation Model of MoS2 Field Effect...

IEEE Electron Device Letters 2018

A New Velocity Saturation Model of MoS2 Field Effect Transistors

Cao, Jingchen, Liu, Wei, Wu, Quantan, Yang, Guanhua, Lu, Nianduan, Ji, Zhuoyu, Geng, Di, Li, Ling, Liu, Ming

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Year:

2018

Language:

english

Journal:

IEEE Electron Device Letters

DOI:

10.1109/LED.2018.2830400

File:

PDF, 1.27 MB

english, 2018

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