![](/img/cover-not-exists.png)
Low On-Resistance GaN Schottky Barrier Diode with High VON Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess Technology
Gao, Jingnan, Jin, Yufeng, Xie, Bing, Wen, Cheng P., Hao, Yilong, Shen, Bo, Wang, MaojunYear:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2830998
File:
PDF, 815 KB
english, 2018