Isotropical Dry Etching of Silicon with High Rate and...

Isotropical Dry Etching of Silicon with High Rate and Planarized Surface by Using SF6 Plasma.

MINETA, Takashi, SUGANUMA, Eiichi
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Volume:
47
Year:
1996
Language:
english
Journal:
Journal of the Surface Finishing Society of Japan
DOI:
10.4139/sfj.47.378
File:
PDF, 905 KB
english, 1996
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