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Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing
Lee, Suhyeong, Kim, Ji Min, Kim, Changhyun, Kim, Hyunwoo, Kang, Hong Jeon, Ha, Min-Woo, Kim, Hyeong JoonLanguage:
english
Journal:
Ceramics International
DOI:
10.1016/j.ceramint.2018.04.190
Date:
April, 2018
File:
PDF, 1.37 MB
english, 2018