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[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - Dopant diffusion in Si, SiGe and Ge : TCAD model parameters determined with density functional theory

Park, Y., Zechner, C., Oh, Y., Kim, H., Martin-Bragado, I., Bazizi, E. M., Benistant, F.
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Year:
2017
Language:
english
DOI:
10.1109/IEDM.2017.8268500
File:
PDF, 729 KB
english, 2017
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