![](/img/cover-not-exists.png)
Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs
Hsieh, Dong-Ru, Chan, Yi-De, Kuo, Po-Yi, Chao, Tien-ShengVolume:
6
Year:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2803800
File:
PDF, 1.46 MB
english, 2018