Investigation of Channel Doping Concentration and Reverse...

Investigation of Channel Doping Concentration and Reverse Boron Penetration on P-Type Pi-Gate Poly-Si Junctionless Accumulation Mode FETs

Hsieh, Dong-Ru, Chan, Yi-De, Kuo, Po-Yi, Chao, Tien-Sheng
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Volume:
6
Year:
2018
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/JEDS.2018.2803800
File:
PDF, 1.46 MB
english, 2018
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