High RF Performance AlGaN/GaN HEMT Fabricated by...

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IEEE Electron Device Letters 2018

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

Lu, Yang, Ma, Xiaohua, Yang, Ling, Hou, Bin, Mi, Minhan, Zhang, Meng, Zheng, Jiaxin, Zhang, Hengshuang, Hao, Yue
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Year:
2018
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2018.2828860
File:
PDF, 604 KB
english, 2018
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