Influence of Ge content on Cu 2 Zn(SnGe)Se 4 physical...

Materials Science in Semiconductor Processing 2018 / 08 Vol. 83

Influence of Ge content on Cu 2 Zn(SnGe)Se 4 physical properties deposited by sequential thermal evaporation technique

González-Castillo, J.R., Pulgarín-Agudelo, F.A., Rodríguez-González, Eugenio, Vigil-Galán, O., Courel-Piedrahita, Maykel, Andrade-Arvizu, J.A.
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Volume:
83
Language:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2018.04.024
Date:
August, 2018
File:
PDF, 972 KB
english, 2018
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