Advantages of Al-free GalnP/lnGaAs PHEMTs for power...

Electronics Letters 1998 Vol. 34; Iss. 6

Advantages of Al-free GalnP/lnGaAs PHEMTs for power applications

Chertouk, M., Bürkner, S., Bachem, K., Pletschen, W., Kraus, S., Braunstein, J., Tränkle, G.
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Volume:
34
Year:
1998
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19980436
File:
PDF, 422 KB
english, 1998
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