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Synaptic behaviors of thin-film transistor with a Pt/HfOx/n-type indium-gallium-zinc oxide gate stack
Yang, Paul, Park, Daehoon, Beom, Keonwon, Kim, Hyung Jun, Kang, Chi Jung, Yoon, Tae-SikLanguage:
english
Journal:
Nanotechnology
DOI:
10.1088/1361-6528/aac17e
Date:
May, 2018
File:
PDF, 717 KB
english, 2018