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[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Reduction of junction leakage current in Sub-10 nm ultra-shallow NiGe/n-Ge Schottky junctions by dopant segregation
Zhang, Rui, Yi Wang,, Li, Junkang, Chen, Feng, Zhao, YiYear:
2016
Language:
english
DOI:
10.1109/ICSICT.2016.7998902
File:
PDF, 662 KB
english, 2016