[IEEE 2017 Symposium on VLSI Circuits - Kyoto, Japan (2017.6.5-2017.6.8)] 2017 Symposium on VLSI Circuits - Excellent reliability of ferroelectric HfZrOx free from wake-up and fatigue effects by NH3 plasma treatment
Chen, Kuen-Yi, Chen, Pin-Hsuan, Wu, Yung-HsienYear:
2017
Language:
english
DOI:
10.23919/VLSIC.2017.8008572
File:
PDF, 1.05 MB
english, 2017