Improvement of Amorphous InGaZnO Thin-Film Transistor Using...

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physica status solidi (a) 2018 / 02

Improvement of Amorphous InGaZnO Thin-Film Transistor Using High-k SrTa 2 O 6 as Gate Insulator Deposited by Sputtering Method

Takahashi, Takanori, Hoga, Takeshi, Miyanaga, Ryoko, Oikawa, Kento, Fujii, Mami N., Ishikawa, Yasuaki, Uraoka, Yukiharu, Uchiyama, Kiyoshi
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Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201700773
Date:
February, 2018
File:
PDF, 616 KB
english, 2018
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