Physical properties of half-Heusler YMnZ (Z = Si, Ge, Sn) compounds via ab-initio study
Sattar, M. Atif, Rashid, Muhammad, Hussain, Fayyaz, Imran, Muhammad, Hashmi, M. Raza, Laref, A., Ahmad, S.A.Volume:
278
Language:
english
Journal:
Solid State Communications
DOI:
10.1016/j.ssc.2018.04.015
Date:
September, 2018
File:
PDF, 2.89 MB
english, 2018