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[IEEE 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2017.6.29-2017.6.30)] 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Junction-barrier Schottky diodes fabricated with very thin highly Mg-doped p + -GaN(20 nm)/n-GaN layers grown on GaN substrates
Hayashi, Kentaro, Ohta, Hiroshi, Tsuge, hirohumi, Nakamura, Tohru, Mishima, TomoyoshiYear:
2017
Language:
english
DOI:
10.1109/IMFEDK.2017.7998037
File:
PDF, 322 KB
english, 2017