[IEEE 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2017.6.29-2017.6.30)] 2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Junction-barrier Schottky diodes fabricated with very thin highly Mg-doped p + -GaN(20 nm)/n-GaN layers grown on GaN substrates

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