TID Effects in Reconfigurable MOSFETs Using 2-D...

IEEE Transactions on Nuclear Science 2018 / 1 Vol. 65; Iss. 1

TID Effects in Reconfigurable MOSFETs Using 2-D Semiconductor WSe 2

Dhakras, Prathamesh, Agnihotri, Pratik, Bakhru, Hassaram, Hughes, Harold L., Lee, Ji Ung
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Volume:
65
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2017.2771149
Date:
January, 2018
File:
PDF, 683 KB
english, 2018
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