[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Electron beam evaporated carbon doping of InGaAs layers grown by gas source molecular beam epitaxy
Salokatve, A., Toivonen, M., Asonen, H., Pessa, M., Likonen, J.Year:
1996
Language:
english
DOI:
10.1109/iciprm.1996.491941
File:
PDF, 337 KB
english, 1996