Double-heterojunction bipolar transistors in InP/GaInAs...

Double-heterojunction bipolar transistors in InP/GaInAs grown by metal organic chemical vapour deposition

Houston, P.A., Blaauw, C., Margittai, A., Svilans, M.N., Puetz, N., Day, D.J., Shepherd, F.R., Springthorpe, A.J.
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Volume:
23
Year:
1987
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19870656
File:
PDF, 305 KB
english, 1987
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