AlGaAs/GaAs HBT with GaInAs cap layer fabricated by...

Electronics Letters 1989 Vol. 25; Iss. 9

AlGaAs/GaAs HBT with GaInAs cap layer fabricated by multiple-self-alignment process using one mask

Ota, Y., Hirose, T., Yanagihara, M., Ryoji, A., Kato, T., Inada, M.
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Volume:
25
Year:
1989
Language:
english
Journal:
Electronics Letters
DOI:
10.1049/el:19890415
File:
PDF, 356 KB
english, 1989
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