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[IEEE 2018 18th International Workshop on Junction Technology (IWJT) - Shanghai (2018.3.8-2018.3.9)] 2018 18th International Workshop on Junction Technology (IWJT) - Titanium (germano-)silicides featuring 10 −9 Ω·cm 2 contact resistivity and improved compatibility to advanced CMOS technology
Yu, Hao, Schaekers, Marc, Chew, Soon Aik, Everaert, Jean-Luc, Dabral, Ashish, Pourtois, Geoffrey, Horiguchi, Naoto, Mocuta, Dan, Collaert, Nadine, De Meyer, KristinYear:
2018
Language:
english
DOI:
10.1109/IWJT.2018.8330298
File:
PDF, 840 KB
english, 2018