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[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (2-4 Aug. 1993)] Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Breakdown characterization of AlInAs/GaInAs junction modulated HEMTs (JHEMTs) with regrown ohmic contacts by MOCVD
Shealy, J.B., Hashemi, M.M., DenBaars, S.P., Mishra, U.K., Liu, T.K., Brown, J.J., Lui, M.Year:
1993
Language:
english
DOI:
10.1109/cornel.1993.303129
File:
PDF, 455 KB
english, 1993