[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Performance-improved normally-off AlGaN/GaN high-electron mobility transistors with a designed p-GaN area under the recessed gate
Huang, Huolin, Zhonghao Sun,, Zifeng Zhang,, Rensheng Shen,, YC Liang,, Hongwei Liang,, Jiming Bian,, Guotong Du,, Lizhong Hu,Year:
2016
Language:
english
DOI:
10.1109/icsict.2016.7998701
File:
PDF, 4.52 MB
english, 2016