Optimization of the Structural Properties and Surface Morphology of a Convex-Graded InxAl1–xAs (x = 0.05–0.83) Metamorphic Buffer Layer Grown via MBE on GaAs (001)
Solov’ev, V. A., Chernov, M. Yu., Sitnikova, A. A., Brunkov, P. N., Meltser, B. Ya., Ivanov, S. V.Volume:
52
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782618010232
Date:
January, 2018
File:
PDF, 901 KB
english, 2018