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[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - A novel 80 V HS-DMOS with gradual-RESURF profile to reduce Ron_sp for high-side operation
Huang, Tsung-Yi, Huang, Chien-Hao, Huang, Chih-Fang, Liu, Jing-Meng, Lo, Kuo-Hsuan, Cheng, Chia-Hui, Jiang, Jheng-Yi, Tsai, Tzung-Ying, Liao, Ting-Wei, Gong, JengYear:
2017
DOI:
10.23919/ISPSD.2017.7988963
File:
PDF, 1.26 MB
2017