[IEEE 2017 29th International Symposium on Power...

  • Main
  • [IEEE 2017 29th International Symposium...

[IEEE 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - Sapporo, Japan (2017.5.28-2017.6.1)] 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) - A novel 80 V HS-DMOS with gradual-RESURF profile to reduce Ron_sp for high-side operation

Huang, Tsung-Yi, Huang, Chien-Hao, Huang, Chih-Fang, Liu, Jing-Meng, Lo, Kuo-Hsuan, Cheng, Chia-Hui, Jiang, Jheng-Yi, Tsai, Tzung-Ying, Liao, Ting-Wei, Gong, Jeng
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Year:
2017
DOI:
10.23919/ISPSD.2017.7988963
File:
PDF, 1.26 MB
2017
Conversion to is in progress
Conversion to is failed