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Evaluation of Anisotropic Biaxial Stress Induced Around Trench Gate of Si Power Transistor Using Water-Immersion Raman Spectroscopy
Suzuki, Takahiro, Yokogawa, Ryo, Oasa, Kohei, Nishiwaki, Tatsuya, Hamamoto, Takeshi, Ogura, AtsushiLanguage:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-018-6318-2
Date:
May, 2018
File:
PDF, 2.45 MB
english, 2018