Structure and properties of epitaxial GaAs and InGaAs films...

Russian Physics Journal 1998 / 09 Vol. 41; Iss. 9

Structure and properties of epitaxial GaAs and InGaAs films grown by low-temperature molecular-beam epitaxy

I. A. Bobrovnikova, A. I. Veinger, M. D. Vilisova, I. V. Ivonin, L. G. Lavrent'eva, D. I. Lubyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. V. Subach, V. V. Chaldyshev, M. P. Yakubeny
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Volume:
41
Language:
english
Pages:
9
DOI:
10.1007/bf02508721
Date:
September, 1998
File:
PDF, 1.04 MB
english, 1998
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