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Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors
Long, Pengyu, Huang, Jun Z., Povolotskyi, Michael, Sarangapani, Prasad, Valencia-Zapata, Gustavo A., Kubis, Tillmann, Rodwell, Mark J. W., Klimeck, GerhardVolume:
123
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5018737
Date:
May, 2018
File:
PDF, 2.21 MB
english, 2018