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[IEEE 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Hangzhou, China (2016.10.25-2016.10.28)] 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Influence of trench oxide on Schottky barrier height for TiSix/Si power diode
Bi-Zan Yang,, Lin-Lin Wang,, Yu-Long Jiang,Year:
2016
Language:
english
DOI:
10.1109/ICSICT.2016.7998930
File:
PDF, 609 KB
english, 2016