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[IEEE 2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2017.12.2-2017.12.6)] 2017 IEEE International Electron Devices Meeting (IEDM) - NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations
Pala, Marco G., Badami, Oves, Esseni, DavidYear:
2017
Language:
english
DOI:
10.1109/IEDM.2017.8268498
File:
PDF, 340 KB
english, 2017