Band-Edge Work Function Obtained by Plasma Doping TiN Metal...

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IEEE Transactions on Electron Devices 2018

Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application

Xu, Qiuxia, Zou, Wei, Xu, Gaobo, Tang, Shan, Tao, Guilong, Salimian, Siamak, Liu, Jinbiao, Liang, Qingqing, Wang, Yao, Xiang, Jinjuan, Wang, Xiaolei, Zhu, Huilong, Li, Junfeng, Zhao, Chao, Raj, Deven,
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Year:
2018
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2018.2823337
File:
PDF, 1.27 MB
english, 2018
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