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Remote plasma atomic layer deposition of silicon nitride with bis(dimethylaminomethyl-silyl)trimethylsilyl amine and N 2 plasma for gate spacer
Jang, Woochool, Kim, Hyunjung, Kweon, Youngkyun, Jung, Chanwon, Cho, Haewon, Shin, Seokyoon, Kim, Hyunjun, Lim, Kyungpil, Jeon, Hyeongtag, Lim, HeewooVolume:
36
Language:
english
Journal:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
DOI:
10.1116/1.5024605
Date:
May, 2018
File:
PDF, 1.78 MB
english, 2018