Growth of GaN Layers on Si(111) Substrates by...

Semiconductors 2018 / 5 Vol. 52; Iss. 5

Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Timoshnev, S. N., Mizerov, A. M., Sobolev, M. S., Nikitina, E. V.
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Volume:
52
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782618050342
Date:
May, 2018
File:
PDF, 700 KB
english, 2018
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