Impact of the Graded-Gap Layer on the Admittance of MIS...

Journal of Communications Technology and Electronics 2018 / 3 Vol. 63; Iss. 3

Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator

Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Vasil’ev, V. V., Varavin, V. S., Dvoretsky, S. A., Mikhailov, N. N., Yakushev, M. V., Sidorov, G. Yu.
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Volume:
63
Language:
english
Journal:
Journal of Communications Technology and Electronics
DOI:
10.1134/S106422691803021X
Date:
March, 2018
File:
PDF, 255 KB
english, 2018
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