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Journal of Electronic Materials 2018 / 4

High-Temperature Annealing as a Method for the Silicon Nanoclusters Growth in Stoichiometric Silicon Dioxide

Ivanova, E. V., Dementev, P. A., Sitnikova, A. A., Aleksandrov, O. V., Zamoryanskaya, M. V.
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Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-018-6280-z
Date:
April, 2018
File:
PDF, 783 KB
english, 2018
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