Evolution of interface chemistry and dielectric properties of HfO 2 /Ge gate stack modulated by Gd incorporation and thermal annealing
He, Gang, Zhang, Jiwen, Sun, Zhaoqi, Lv, Jianguo, Chen, Hanshuang, Liu, MaoVolume:
6
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.4941698
Date:
February, 2016
File:
PDF, 3.90 MB
english, 2016