Features of Creating Ohmic Contacts for GaAs/AlGaAs...

Russian Microelectronics 2017 / 12 Vol. 46; Iss. 8

Features of Creating Ohmic Contacts for GaAs/AlGaAs Heterostructures with a Two-Dimensional Electron Gas

Kurochka, S. P., Stepushkin, M. V., Borisov, V. I.
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Volume:
46
Language:
english
Journal:
Russian Microelectronics
DOI:
10.1134/S106373971708011X
Date:
December, 2017
File:
PDF, 726 KB
english, 2017
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