High power-handling SPDT switch in 0.25-µm GaN technology

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International Journal of RF and Microwave Computer-Aided Engineering 2018 / 05

High power-handling SPDT switch in 0.25-µm GaN technology

Polli, G., Palomba, M., Colangeli, S., Ciccognani, W., Salvucci, A., Vittori, M., Limiti, E.
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Language:
english
Journal:
International Journal of RF and Microwave Computer-Aided Engineering
DOI:
10.1002/mmce.21413
Date:
May, 2018
File:
PDF, 1.48 MB
english, 2018
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