Diffusion of Magnesium in Led Structures with InGaN/GaN...

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Russian Physics Journal 2018 / 5

Diffusion of Magnesium in Led Structures with InGaN/GaN Quantum Wells at True Growth Temperatures 860–980°C of p-GaN

Romanov, I. S., Prudaev, I. A., Brudnyi, V. N.
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Language:
english
Journal:
Russian Physics Journal
DOI:
10.1007/s11182-018-1383-9
Date:
May, 2018
File:
PDF, 172 KB
english, 2018
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