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[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA, USA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Grasser, T., Stampfer, B., Waltl, M., Rzepa, G., Rupp, K., Schanovsky, F., Pobegen, G., Puschkarsky, K., Reisinger, H., O'Sullivan, B., Kaczer, B.Year:
2018
Language:
english
DOI:
10.1109/IRPS.2018.8353540
File:
PDF, 402 KB
english, 2018